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Electrochemical corrosion and electrochemical migration of 64Sn-35Bi-1Ag solder doping with xGe on printed circuit boards

机译:在印刷电路板上掺杂xGe的64Sn-35Bi-1Ag焊料的电化学腐蚀和电化学迁移

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Ge-doped effects on electrochemical corrosion (ECC) and electrochemical migration (ECM) behaviors of 64Sn-35Bi-1Ag (SBA) solder on printed circuit boards (PCBs) in 3 wt% NaCl solutions were discussed. ECC was conducted by potentiodynamic polarization and electrochemical impedance (EIS) tests. Dendrites growth is a result of electrochemical migration (ECM) process, which is another factor affecting soldering reliability for electronic packagings, it was carried out as a designed schematic diagram coupled with a direct current power supply. Microstructures of products were investigated by SEM coupled with EDAX, XRD techniques. ECC results showed that anti-corrosive capacity increased as an increase of Ge addition in SBA solder which was expressed as the percent corrosion prevention (IE%), there was a maximal IE% value (83.74) when Ge addition was 05 wt%, this obtainment was consistent to EIS results. The probable reason was that Ge had a "skin collection" effect, that was, it highly enriched and segregated at edge of SBA solder, which protected Sn in SBA solder from being corroded. Microstructure of corrosive products was distinctly different for SBA solder with and without Ge addition. ECM results showed that the dendritic grown rate of pure SBA solder was slower than those of its candidates with Ge dopings. Dendrites of SBA solder with 0.5 wt% Ge addition grew to about 100-150 nm in length and 20-50 nm in width after ECM test for 8 h, they were nanorods arranged trimly into arborization. While dendrites was shorter under the same condition for pure SBA solder without Ge doping. The dendritic growth mechanism was tentatively discussed. It showed the loaded electronic field intensity during ECM process played an important role for dendritic formation owing to its controlling the dendritical crystal anisotropic growth rate. Medium concentrations had an another key effect, which affected by controlling the ion diffusion from anode to cathode. From the point of microelectronic packagings, Ge addition was advantage to improve anti-corrosion capacity of SBA solder, but it also reduced soldering reliability if ECM process took place in surrounding of wet and thermal weather. (C) 2017 Elsevier Ltd. All rights reserved.
机译:讨论了掺Ge对3%NaCl溶液中印刷电路板(PCB)上64Sn-35Bi-1Ag(SBA)焊料的电化学腐蚀(ECC)和电化学迁移(ECM)行为的影响。 ECC通过电位极化和电化学阻抗(EIS)测试进行。树枝状晶体的生长是电化学迁移(ECM)过程的结果,该过程是影响电子封装焊接可靠性的另一个因素,它是作为设计示意图与直流电源一起进行的。用SEM结合EDAX,XRD技术研究了产品的微观结构。 ECC结果表明,随着SBA焊料中Ge添加量的增加,抗腐蚀能力也随之提高,这表示为防腐蚀百分比(IE%),当Ge添加量为05 wt%时,IE%值为最大值(83.74)。获得的结果与EIS结果一致。可能的原因是Ge具有“集肤”效果,即它在SBA焊料的边缘高度富集和隔离,从而保护了SBA焊料中的Sn不受腐蚀。添加或不添加锗的SBA焊料的腐蚀性产品的微观结构明显不同。 ECM结果表明,纯SBA焊料的树枝状生长速率慢于Ge掺杂候选材料的树枝状生长速率。在ECM测试8小时后,添加了0.5 wt%Ge的SBA焊料的树枝状晶体长约100-150 nm,宽度约20-50 nm,它们是呈棒状排列的纳米棒。对于纯锗SBA焊料,在相同条件下,枝晶较短。初步讨论了树突的生长机理。结果表明,ECM过程中加载的电场强度由于控制了树枝状晶体的各向异性生长速率,对树枝状晶体的形成起着重要作用。中等浓度还有另一个关键作用,它受控制从阳极到阴极的离子扩散的影响。从微电子封装的角度来看,添加Ge可以提高SBA焊料的抗腐蚀能力,但是如果在潮湿和高温的天气下进行ECM工艺,Ge的焊接可靠性也会降低。 (C)2017 Elsevier Ltd.保留所有权利。

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