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Asymmetric resistive switching behaviour in a Au/a-C:Co/Au planar structure

机译:Au / a-C:Co / Au平面结构中的不对称电阻切换行为

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摘要

Using a simple fields induced mass motion method, Au/a-C:Co/Au planar structures with micro-gap Au electrodes were fabricated. Asymmetric current-voltage characteristics and resistive switching behaviours were observed in these cells. Reliable performance, with a reasonable ON/OFF ratio of 4, stable endurance of 200 cycles, and good retention of 10(5) s, were achieved at the read voltage of -3.6 V. Space charge limited current (SCLC) theory with an asymmetric potential barrier caused by different densities of traps was proposed to explain the asymmetric resistive switching behaviour.
机译:使用简单的场致质量运动方法,制造了具有微间隙金电极的Au / a-C:Co / Au平面结构。在这些电池中观察到不对称的电流-电压特性和电阻开关行为。在-3.6 V的读取电压下,具有合理的性能,合理的开/关比> 4,稳定的耐久度> 200周期,以及良好的保持时间> 10(5)s。空间电荷限制电流(SCLC)提出了由不同密度的陷阱引起的具有不对称势垒的理论来解释不对称电阻切换行为。

著录项

  • 来源
    《Microelectronics & Reliability 》 |2018年第8期| 52-56| 共5页
  • 作者单位

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Suzhou Univ Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

    Suzhou Univ Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China;

    Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Asymmetric resistive switching; FIBJ; Amorphous carbon; Micro-gap; SCLC theory;

    机译:非对称电阻开关FIBJ非晶碳微隙SCLC理论;

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