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Design rule related defects formation

机译:设计规则相关的缺陷形成

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Formation of implantation induced tertiary defects is reported to be closely related to the design rule of poly-Si (on field oxide) to active area distance. Leakage current measurements of N + /P-type junctions was used to characterize the defect density of a variety of layout structures. Material analyses were also conducted to reveal the defect natures in Si crystal lattices and occurring probability of dislocations.
机译:据报道,由注入引起的第三缺陷的形成与多晶硅(场氧化层)到有源区距离的设计规则密切相关。 N + / P型结的泄漏电流测量用于表征各种布局结构的缺陷密度。还进行了材料分析,以揭示Si晶格中的缺陷性质和位错发生的可能性。

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