Anew hot carrier degradation law for MOSFET lifetime prediction

摘要

We propose in this paper a new hot carrier degradation law for a reliable MOSFET lifetime prediction. We show that the proposed exponential function can describe all kind of curve concavity (saturating or non-saturating shapes) and can fit very well with the experimental data for he whole duration of the stress. Finally, it gives a more accurate lifetime values as compared to previous modelings because it accounts for the concavity of the saturating degradation law.