2D PHYSICAL SIMULATION OF DEGRADATION ON TRANSISTORS INDUCED BY FIB EXPOSURE OF DIELECTRIC PASSIVATION

摘要

FIB modifications are known to result in successful reqairs of integrated circuits. Nevertheless, it appears necessary to understand the interaction between Ga+FIB and integrated circuits and ot be able to confirm that modificaitons do not induce lectrical damages. In this paper, we present electrical parameter evolution of NPN bipolar transistor under FIB exposure. These experimental results allow assuming hypothesis on the physical origin of dielectric passivation degradation. Based on this hypothesis, 2D physical simulation results allow confirming the identificaiton of the physical mechanism responsible for the DC electrical parameter degradation of bipolar transistor.