Thermal Characterization of Power Devices by Scanning Thermal Microscopy Techniques

摘要

The scanning thermal microscope (SThM) is used for investigating chip temperatures of power devices under operating conditions enabling the localization of ailure-induced hot spots. In this paper, we present the measurement of the temperature distribution on the surface of a free-wheeling diode of ana IGBT.A new modulation technique implemented into the SThM for the determination of local quantitative thermal conductivities, the so-called 3ω technique, is also used for further analyses of defective power devices. With this technique, a non-uniformity of the thermal conductivity in the micrometer range could be found at the anode side of a GTO.