Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up

摘要

The breakdown of 4-7 nm gate oxides is investigated using fast-feedback Hg-probe measurements to perform Exponentially Ramped Current Stress(ERCS) tests. Soft breakdown is detected in oxides thinner than 5nm. However, it is found that the detection of soft-breakdown during ERCS test depends on the measurement set-up.In particular, it can be completely suppletely suppressed by reducing the gae oxide capacitor area. The consequences of this result ofr correct routine assessment of gate oxide integrity in microelectronic manufacturing are discussed.