HBM and TLP ESD robustness in smart-power protection structures

摘要

In this paper we will presetn data concerning the ESD robustness of smart power protection structures (BCD technology) for input-output circuits. A comparison between the robustness of "p-body" and "p-well" based structures and a study of th einfluence of layout parameters on the ESD robustness will be given. The correlation between ESD robustness obtained with different test methods (HBM and TLP) will be also presented.