Temperature Dependence of Hot Carrier Induced MOSFET Degradation at Low Gate Bias

摘要

This paper reports a new experimental finding on the temperature dependence of the substrate current and hot carrier induced device degration at lwo gate bias. It has been found that the substrate current increase and the drain current degradation is more significant for high operating temperature at low gate bias. It has been observed that the hot carrier induced performance degradation of a latch-type input buffer increases at the elevated tempoerature.