Model For The Oxide Thickness Dependence Of SILC Generation Based On Anode Hole Injection Process

摘要

A new modle for the oxide thickness dependence of the SILC generation has been proposed on the basis of defects created by anode hole injection. This modle which has been validated on oxides with thickness down to ≈3nm, allows the explanation of the bell-shaped behavior of th eSILC variation with oxide thikness adn predicts a strong reduciton of the SILC intensity for ultra thin oxides operated in the direct tunneling regime.