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Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique

机译:使用高分辨率测量技术对LDD NMOSFET的热载流子退化建模

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By using a new, state-of-the-art measureement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03. A new model based on Goo et al. [1] has been develoed and verified in the full region between 0.03 up to almost 10 for the ageing parameter I_d,lin. The introduction of a simulataneous non-linear least-square fit of the degadation curves has been successful for predicting the complete degradation behaviour at real life operating conditions.
机译:通过使用最新的测量技术,研究了LDD nMOSFET的热载流子退化。这种高分辨率的测量技术可以测量低至0.03的降解水平。基于Goo等人的新模型。 [1]已针对老化参数I_d,lin在0.03到几乎10之间的整个区域进行了开发和验证。退化曲线的模拟非线性最小二乘拟合的引入已成功用于预测现实生活条件下的完全降解行为。

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