Cathodoluminescence from hot electron stressed InP HEMTs

摘要

For the first time in our knowledge a correlation between hot electrons induced degradation and cathodoluminescence (CL) signal in InAlAs/InGaAs/InPO HEMTs has been found. The SEM CL spectra fo stressed devices reveal a lclear reduction in the intensity of the signal collected from the gate-drain region, which confirms the hypothesis of traps development in such region, already supported by changes in the electrical characteristics. This technique can then be used for physicla investigation of the hot electron stress damage induced in InP based HEMTs.