Sub-surface analyses of defects in integrated devices by scanning probe acoustic micoscopy

摘要

Acousticla analyses of integrated devices have been performed at the nanometer level by the detecton of acousticla waves locally generated by a modulation of the load foce of a scanning probe microscope tip onto a device. Monitoring the acousticla signal measured at the reverse side of the device under test allows us to localize sub-surface defects due to the corresponding signal change wiht approximately 150nm spatial resolution.