Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs

摘要

The hot-carrier degradation of deep-submicrometer LDD nMOSFETs under different gate-stress regimes is analyed by means fo current-voltage and charge pumping characteristics. Interface state generation is found to arise as the major mechanism responsible for device degradation in the whole range of gate regimes studied. The effects of Short Electron and Hole Injection phases on hot-carrier-stressed devices are also analysed. Although SEI phases are found to be an efficient tool for revealing part of the damage generted in stresses at low gate voltages, the performance of a first SHI phase after stress at high gate bias (V_g>V_d/2) results in a significant additional degradation of the devices. This enhanced degraaation is attributed to a sudden interface stats build-up ocurring near the Si/spacer interface only under the first hot-hole injection condition.