Cross-section analyis of electric devices by scanning capacitance microscope

摘要

Carrier influence of semiconductor devices is important as it affects the funciton of the device. In this experimetn, the carrier density distribution in the cross-section of semiconductor device was analyzed by SCM: Scanning Capacitance Microscope which is one of the measuring mode of SPM: Scanning Probe Microscope. This paper describe measurement result of change in carrier dencsity by the gate voltage at p channel area fo CMOS device and its efficiency to investigating dopant profile on 16MDRAM cross-section.