TIVA and SEI development for enhanced front and backside interconnection failure analysis

摘要

Thermally-Induced Voltage Alteration (TIVA) and Seebeck Effect Imaging (SEI) are newly developed techniques for localizing shorted and open conductors form the front and backside of an IC. Recent improvements have greatly increased the sensitivity of the TIVA/SEI system reduced the acquisition times by more than 20X, and localized previusly unobserved defects. The system are presented.