Review of reliability issues of metal-semiconductor-metal and avalanche photonic detectors

摘要

In this paper, we present a brief review of the principal mechanisms that influence the reliability of metalsemiconductor-metal (MSM) interdigitated photodetectors and avalanche photodiodes (APD). The most important mechanism influencing reliability in these devices is the dark current. Howeve, other mechanisms such as edge and microplasmic breakdown and electrode degradation, can also affect device reliability. In this study, we describe numerical simuilation techniques that can be utilized to understand the workings of some of these mechanisms and illustrate their usage in a few reqpresentative devices. Specifically, we discuss how advanced drift-diffusion and hydrodynamic simulation techniuqes can be used to study the dark current as well as the location of breakdown in MSM and APD devices.