The success of III-nitride optoelectronic devices paths the way towards emerging devices in microelectronics. These devices are currently at the threshold to commercialization, therefore reliability considerations are becoming increasingly important. This paper reiews the material and process technology fo III-nitride microelectronic devices in the scope of reliabiltiy. Since statistical reliability data are lacking in the current state of research the review starts with a summary of how reliability can be designed into process modules being relevant for microelectronic devices. This includes a discussion of the most important issues of material growth, metallization, implantation, dry etching and surface passivation. The subsequent chapter focuses to microelectronic devices and hihglights technological challenges that have to be met in order to obtain reliable devices. Finally, results of lifetime experiments (thermal aging) demonstrate that III-nitride devices have the potential for reliable operation even at elevated temperatures up to 400degC.
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