Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

摘要

The reliability of IngaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB_2/Au) under current and temperature stress is studied in this paper. We further reoprt results of current stress on three p-GaAs doping impurities namely Zn, Be and C. The effect of O~+/H~+ and O~+ /He~+ ions, used in the fabrication of planar self-aligned HBTs, is also inestigated in the stability of device dc current gain. The instability phenomena typicla of each factors and their effects on the HBT characteristics are reported.