Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

摘要

The triggering of grounded-gate nMOS transistors and field-oxide devices, essential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instability effects in snapback operation under DC and TLP conditions are demonstrated. The comprelhensive correlation of emission and electrical behavior allows an improved interpretation of device operation. Technological influences on the trigger uniformity are discussed.