Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al-Si-Cu stripes

摘要

Resistance data of passivated Al-Si-Cu contact electromigration test structures clearly show three different stages: incubation, time-dependent drift and ultimately saturation. A detailed model describing all three stages was developed and evidenced by a thorough analysis of the tested material. By using this modle, a length dependent lifetime can be calculated and data obtained from different test struation, lines below a certain length will never reach the failure criterion! Taking this information into account during the design phase leads to very robust interconnects.