首页> 外文期刊>Microelectronics & Reliability >Thermally stimulated current in SiO_2
【24h】

Thermally stimulated current in SiO_2

机译:SiO_2中的热激发电流

获取原文
获取原文并翻译 | 示例
       

摘要

Thermally stimulated current (TSC) techniques provide information about oxide-trap charge densities and energy distributions in MOS (metal-oxide-semiconductor) capacitors exposed to ionizing radiation or high-field stress that is difficult or impossible to obtain via standard capacitance-voltage or current-voltage techniues. The precision and reproducibility of measurements through repeated irradiation /TSC cycels on a single capacitor is demonstrated with a radiation-hardened oxide, and small samplet-o-sample variations ae observed. A smal increase in E'δ center density may occur in some non-radiation-hardened oxides during repeated irradiation/TSC measurement cycles. The importance of choosing an appropriate bias to obtain accurate measurements of trapped charge densities and energy distributions is emphasized. A 10 nm deposited oxide with no subsequent annealing above 400degC shows a different traped-hole energy distribution than thermally grown oxides, but a similar distribuiton to thermal oxides is found for deposited oxides annealed at higher temperatures. Charge neutralization during switeched-bias irradiation is found to occur both because fo hole-electron annihilation and increased electron trapping in the near-interfacial SiO_2. Limitations in applying TSC to oxides thinner than ~nm ar discussed.
机译:热激励电流(TSC)技术可提供有关暴露于电离辐射或高电场应力下难以或无法通过标准电容-电压或电压获得的MOS(金属氧化物半导体)电容器中氧化物陷阱电荷密度和能量分布的信息电流电压技术。用辐射硬化的氧化物证明了在单个电容器上通过重复辐照/ TSC晶胞进行测量的精度和可重复性,并且观察到小样品间的样品偏差。在重复的辐射/ TSC测量周期中,某些非辐射硬化的氧化物可能会出现E'δ中心密度的小幅增加。强调了选择合适的偏置以获得捕获的电荷密度和能量分布的准确测量值的重要性。 10纳米沉积的氧化物没有在400℃以上进行后续退火,与热生长的氧化物相比,陷阱空穴的能量分布有所不同,但是对于在较高温度下退火的沉积氧化物,发现了与热氧化物相似的分布。发现摆动偏斜辐照期间的电荷中和是因为空穴电子an灭和近界面SiO_2中的电子俘获增加所致。在讨论中,将TSC应用于比〜nm ar薄的氧化物的局限性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号