Remote plasma nitridation, deuterium anneal and pocket implant effects on NMOS hot carrier reliability

摘要

These are several advanced processes which are being actively studied as candidates for sub-0.25μm technology. This paper studies the effects on NMOS hot carrier reliability form remote plasma nitrided oxide (RPNO), deuterium annelal and pocket implant. It is found that RPNO will not affect the SiO_2/Si interface. The hot carrier reliability is better for th esame device channel current. This is due ot making the effective oxide thickness thinner and achieving the same drive current wiht longer channel length. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewall, if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is done.