Experiences on reliability simulation in the framework of the qPROPHECY project

摘要

Electromigration and oxide time dependent dielectric brakdown simulations based on library elements of a 0.35μm CMOS technology have been performed. In the case fo hot carrier degradation simulations as well as experiments using 99-stage ring osicllators fo the same 0.35μm CMOS technology have been carried ouThe frequency behaviour as a function of supply voltage and temperature has been investigated. Relaxation effects on the ring oscillators have been found. These effects are not covered by the reliabiltiy simulation tool. In a certain region of suply voltage and operation time the results of simulations could be confirmed by experimets. In all other cases the measured frequency degradation was smaller than the simulated degradation.