Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

摘要

The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a-SiO_xN_y) films with differnt compositions were measured for the first time in the near infrared to visible-ultraviolet range.The red band with energy at 1.8-1.9 eV, ultravilet bands with energies 3.1,3.4-3.6,4.4-4.7, and 5.4 eV were observed in a-SiO_xN_y. The 1.8-1.9 eV band is attributed to th eoxygen adn nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supoposed to be due to the Si-Si bonds.