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A simulation-based semiconductor chip yeld model incorporating a new defect cluster index

机译:结合新的缺陷簇指数的基于仿真的半导体芯片产量模型

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This paper proposes a new cluster index that utilizes the defect location data on a wafer in terms of the coefficent of variation. The proposed cluster index is independent of the chip area and does not rquire assumptions on the distribution of defects. An extensive simulation is performed under a variety of cluster patterns and a yield prediction moedel is derived through the regression analysis to the relate the yield with the proposed cluster index and the average number of defects per chip. The performance ofthe proposed simulaation-based yield prediction model is compared with that of the well-known negative binomial model.
机译:本文提出了一种新的聚类索引,该聚类索引根据变化系数利用了晶片上的缺陷位置数据。所提出的簇索引与芯片面积无关,并且不需要关于缺陷分布的假设。在各种簇模式下进行了广泛的仿真,并通过回归分析得出了产量预测模型,以将产量与建议的簇指数和每个芯片的平均缺陷数相关联。将所提出的基于模拟的产量预测模型的性能与众所周知的负二项式模型的性能进行比较。

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