Random telegraph signal noise instabilities in laticmismatched InGaAs/InP photodiodes

摘要

Spontaneous and induced instabilities in the character of Random Telegraph Signal (RTS) noise are studied in photodetector arrays, fabrcated on lattice-mismatched InGaAs/InP heterostructures. The disappearance and reappearance of the RTS noise as well as abrupt changes in the RTS noise amplitude and pulse complexity are investigated as a funciton of voltage and temperature. the RTS noise instabilities are explained in terms of structural transformation of complex multistable crystalline defects.