A study of the interface states in MIS-structures with thin SiO_2 and SiO_xN_y layers using deep level transient spectroscopy

摘要

Deep level transient spectroscopy (DLTS) and quasistatic CV measurements were used for the study of the interface states fo thin SiO_2 and SiO_xN_y layers of 6-9nm thickness, grown by rapid thermal processing in O_2 or N_2O ambient. DLTS was applied either in the saturating pulse or in the small pulse (energy resolved) mode. From an Arrhenius evaluation of the peaks obtained by temperature-scan measurements with small pulse excitation we derived the distribution of the capture cross section σ_n in the upper half of the gap, which exhibits a drastic decrease towards the conduction band edge.