Dielectric characterization of ferrolelectric thin films deposited on silicon

摘要

This paper describes some experimental results concerning the dielectric characterizations of PZT, PT and BT ferroelectric thin films deposited on silicon. Firstly, the ferroelectric properties of these films are checked, notably the high dielectric constant values values. Secondly, assuming a simple electrical model, we derive from impedance measurements the conductivity of the platimum deposited as a bottom electrode.