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首页> 外文期刊>Microelectronics & Reliability >Analysis of space and energy distribution of stress-induced oxide traps
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Analysis of space and energy distribution of stress-induced oxide traps

机译:应力诱发氧化物陷阱的空间和能量分布分析

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A new experimental method for the determination of the energy distribution of neutral traps in oxide is presetned, based on an analysis of the transient SILC current. Results show that the stress damage is mostly located from about 2 to 2.7 eV from the oxide conduciton band, and that a greater stress is generted at the anode side of the stress. Preliminary results of a detailed numericla model for the trap-assisted tunneling are presented, showing that an exponentially decaying trap profile within the oxide is needed to account for the discharge current transient.
机译:在分析瞬态SILC电流的基础上,预设了一种确定氧化物中性陷阱能量分布的新实验方法。结果表明,应力损伤主要位于距氧化物导电带约2至2.7 eV的位置,并且在应力的阳极侧产生了更大的应力。给出了用于陷阱辅助隧穿的详细数值模型的初步结果,表明在氧化物中需要指数衰减的陷阱轮廓来解决放电电流瞬变。

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