On the correlation between SILC and hole fluence throughout the oxide

摘要

Stress-induced leakage current (SILC) has been recognized as a topic of concern in flash memory reliabiltiy. It is a reliable failure mechanism, occurring long before oxide breakdown and, hence, limiting ocide lifetime [1]. The physicla origin and mechanisms of SILC have not yet been clearly understood and several points open to discussion remain. In this work the role of oxide hloe fluence in producing the SILC is discussed. An universal power law of SILC generation kinetics is proposed versus the hole fluence throughout the oxide. The experimental results are theoretically validated by modeling the measured quantum-yield by the contributions of both anode hole injection and electron valence band injection mechanisms.