ONO and NO interpoly dielectric conduction mechanisnms

摘要

Interpoly stacked-dielectric conduction mechanisms are investigated. Extensive Si_3N_4 and SiO_2 and SiO_2 single-layer transport analysis analysis leads to a clear multi-layer dielectric understanding. An improved carrier-separation model is proposed for a 35 A-thick SiO_2 and applied ot ONO results. No electrical behavior is satisfactorily modelled under both gate polarities.