Thin stoichimetric silicon nitride prepared by r.f.reactive sputtering

摘要

Thin silicon nitride films were prepared on silicon wafers at deposition rates of 4on/min to 56 nm/min by r.f. reactive sputtering. Various mechanicla, chemicla and opticla properties were investigated as a function of r.f.power, gas composition adn temperature by means of AFM, RBS, XPS and an ellipsometer. Chemicla stoichiometric films, with N-to-Si atomic ratio of 4:3 adn refractive index of 2.0 were achieved even at room termperature. An interference filter for a UV detector with central wavelength of 254 nm was manufactured based on sputtered nitride, aluminum and silicon dioxide.