Al thermomigration applied to the formation of deep unctions for power device insulation

摘要

An alternative method for creating total verticla junction insulation of power devices is presented. It involves the thermomigration of melted Al/Si. The method is first theoretically presented together with the specifically designed rapid thermal processor used in the experiments. Physical and electricla results are then given showing hte efficiency of the method in terms of thermal budget, surface consumption and voltage handling capability. The issue of manufacturabiltiy is finally addressed.