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An investigation on IGBT junction temperature estimation using online regression method

机译:在线回归方法对IGBT结温估计的研究

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摘要

In order to obtain junction temperature of insulated-gate bipolar transistor (IGBT) on electric vehicle, a number of studies have proposed junction temperature (Tj) estimation methods. However, some of these methods require additional circuits which lead to cost increase, some methods simulate the IGBT thermal process with thermal model, which induces a deviation between real functional results and simulation, and the other algorithm based methods may involve upgrading the main control unit (MCU) with increased costs. This paper proposes a method of IGBT Tj estimation with regression analysis. The presented method firstly extracts the most sensitive factors from IGBT power loss model, and then the factors are applied in a data fitting function to characterize Tj. After that, the mentioned fitting function is validated by regression analysis with statistics Anderson - Darling (AD) and P-value. Finally the Tj estimation fitting function is demarcated by the negative thermal coefficient (NTC) measured temperature (TNTC). With the method using TNTC demarcation, the error bandwidth between estimated Tj and measured Tj is 3.4 degrees C in total. Compared with the Tj estimation without TNTC demarcation, the error bandwidth of Tj decreased from 6.9 degrees C to 3.4 degrees C. The Tj estimation method with TNTC demarcation is efficient for an online Tj estimation of IGBT modules without increased costs.
机译:为了获得电动车辆上绝缘栅双极晶体管(IGBT)的结温,提出了多种研究,提出了结温(TJ)估计方法。然而,其中一些方法需要额外的电路,这导致成本增加,一些方法模拟了热模型的IGBT热过程,它引起了实际功能结果和仿真之间的偏差,并且基于其他算法的方法可能涉及升级主控制单元(MCU)成本增加。本文提出了一种与回归分析的IGBT TJ估计的方法。呈现的方法首先从IGBT功率损耗模型中提取最敏感的因素,然后在数据拟合函数中应用因素以表征TJ。之后,通过与统计数据库和P值的统计分析来验证提到的拟合功能。最后,TJ估计拟合功能由负热系数(NTC)测量温度(TNTC)划分。使用使用TNTC分界的方法,估计TJ和测量TJ之间的误差带宽总计为3.4摄氏度。与没有TNTC划分的TJ估计相比,TJ的误差带宽从6.9摄氏度降低到3.4摄氏度。具有TNTC分界的TJ估计方法对于IGBT模块的在线TJ估计有效,而不是增加成本。

著录项

  • 来源
    《Microelectronics reliability》 |2021年第9期|114321.1-114321.12|共12页
  • 作者单位

    Chongqing Univ State Key Lab Power Transmiss Equipment & Syst Se Chongqing 400044 Peoples R China|Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China|Chongqing Univ State Key Lab Mech Transmiss Chongqing 400044 Peoples R China|Chongqing Univ Coll Mech & Vehicle Engn Chongqing 400044 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Changan New Energy Automobile Technol C Chongqing 401133 Peoples R China;

    Chongqing Univ State Key Lab Power Transmiss Equipment & Syst Se Chongqing 400044 Peoples R China;

    Chongqing Univ State Key Lab Power Transmiss Equipment & Syst Se Chongqing 400044 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Insulated gate biplar transistor (IGBT); Junction temperature; Estimation; Electric vehicle;

    机译:绝缘栅双极晶体管(IGBT);结温;估计;电动车辆;

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