Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices

摘要

In this paper, the influence of ageing by PCT (Power Cycling Test) on the hard switching behavior of IGBT (Insulated Gate Bipolar Transistor) devices, especially the current change rate di/dt and voltage change rate dv/ dt during the switching process, is investigated with standard DC-PCT and a PCT with superimposed switching losses. 1200 V IGBTs with two different package forms are used for the PCTs to stimulate two common failure modes: discrete devices with the bond wire failures and modules without baseplate to trigger the solder layer degradation. To evaluate the hard switching behavior of the IGBTs, a DPT (double pulse test) is repetitively performed after a specific number of cycles at the same test conditions to determine the influence of power cycling ageing. The experimental results show that the current and voltage transient transitions of IGBT devices during hard switching are independent of the power cycling ageing.