Latency optimized clustered error mitigation for multi-level flash memory using product code

摘要

Soft errors due to radiation-induced multi-bit upsets (MBUs) are very prominent in the present flash memories built with ultra large scale VLSI technology. Use of multi-level cells in flash memories increase the chance of adjacent MBUs or clustered error. Single bit error detection and correction (EDAC) codes are not enough to mitigate the effect of clustered error due to their small error correction capability. On the other hand, commonly used multi-bit EDAC codes have large overhead, complex decoding circuitry, high error correction latency and are unable to correct large number adjacent erroneous bits. In this paper, we have proposed a product code coined as linear shortened block code based product code (LSBCPC) for mitigation of clustered error in the flash memory devices. LSBCPC utilizes latency optimized scalable shortened block code as the component code and can correct higher number of adjacent erroneous bits in memory devices compared to the other state of the art solutions. The proposed LSBCPC promises better error correction coverage with 28%, 14%, and 13% reduction in terms of redundant bits, 13%, 11%, and 10% reduction in terms of area and 24%, 26%,and 22% reduction in terms of latency in 16 x 16, 32 x 32 and 64 x 64 memory devices respectively compared to the highly cited research work. The performance of the proposed method is validated in terms of redundant bits, error correction coverage, mean error to failure, area consumption, power utilization and decoding latency.