机译:等离子体工艺沉积厚绝缘膜的击穿电压和AC TDDB可靠性的温度依赖性研究
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Toshiba Elect Devices & Storage Corp Adv Discrete Dev Ctr Nomi Ishikawa Japan;
Temperature; TDDB; Time-to-failure;
机译:关于TDDB的现场依赖性:厚电介质可靠性
机译:关于TDDB的现场依赖性:厚电介质可靠性
机译:等离子体增强ALD沉积60 nm厚SrBi_2Ta_2O_9薄膜的低压开关特性
机译:对线(BEOL)CU /超低k时间依赖介电击穿(TDDB)依赖性的28nm后端的研究
机译:交流磁控溅射在低温下沉积的生物相容性氧化铝膜的性能。
机译:用于晶体管的LaZrO绝缘子的混合簇前体:高温加工膜的性质以及溶液凝胶和固体的结构
机译:等离子离子浸渍加工技术沉积的碳碳氮化膜中碳含量的依赖性
机译:等离子体模量,等温应力和等离子体沉积氮氧化硅薄膜的温度依赖性