Experimental results on diodes and BIMOS ESD devices in 28 nm FD-SOI under TLP & TID radiation

摘要

The electrostatic discharge (ESD) protection is a major concern for advanced CMOS technology manufacturing. Several solutions are available on market with efficient robustness and compliant with the ESD window especially in 28 nm FD-SOI technology. In the framework of harsh environment applications and to explore the performance under total ionizing dose (TID) radiation, it is important to investigate ESD protection devices such as gated and STI diodes in hybrid bulk or BIMOS solution in thin silicon film. This study is based on transmission line pulse (TLP) characterization before and after Co60 TID radiation in the range of [25 krad-200 krad]. This dose range is chosen for a first robustness exploration and in link with product applications. Following this analysis, we expect to gain better understanding of robustness and push the final performance of the device. The preliminary results will be useful to give a trend and to improve the device robustness against ESD and TID events and lead to more competitive solutions.