Research on 3D TLC NAND flash reliability from the perspective of threshold voltage distribution

摘要

Aiming at the inaccurate problems of lifetime prediction and reliability evaluation of 3D Trinary-Level Cell (TLC) NAND flash memory, a method to evaluate the remaining lifetime and the reliability of flash memory based on the threshold voltage distribution is proposed. In order to analyze the impact on Program/Erase (P/E) cycles on the flash memory from the perspective of voltage distribution, a complete distribution curve of threshold voltage is drawn from the construction of a reasonable mathematical model. Compared with the conventional used curve of P/E cycles-error rate, it reflects the most concentrated part of the flash memory error rate and makes lifetime prediction more accurate.