Mitigating single-event multiple transients in a combinational circuit based on standard cells

摘要

Single-event multiple transients (SEMTs) are measured in a combinational circuit based on standard cells under pulsed laser irradiation. A circuit simulation is performed to explain the experiment results and investigate the SEMTs mitigation strategy. Pulsed laser exposures of different rows show that the single-event double transients (SEDTs) may be merged into single-event single transients due to the pulse broadening. The pulse broadening likely results from the unbalanced high to low and low to high propagation delays, and is found to be impacted by the supply voltage and the load capacitance of the investigated circuit. In addition, making the NAND/inverter load capacitance ratio less than one and using lower supply voltages tend to mitigate SEDTs and reduce the pulse widths of SETs measured at the chain output.