Total ionizing dose effects on resistance stability of Pt/HfO_2/Al_2O_3/TiN structure RRAM devices

摘要

Total-ionizing dose effects on the resistive switching properties of HfO2/Al2O3 bipolar resistive-random-access-memory devices under Co-60 gamma irradiation were investigated in this study. Insignificant impact was found for Co-60 gamma irradiation with a dose of 200 krad (Si) but the impact became significant for higher irradiation intensity of 1 Mrad (Si). The experiment results indicated that it is possible for device high resistance off-state or low resistance on-state to change after a total ionizing dose step stress threshold being surpassed. Moreover, it was found that the Co-60 gamma irradiation of 1 Mrad (Si) caused degradation of device high-resistance state, low-resistance state, set/reset voltages, and endurance characteristics, due to the simultaneous induce of oxygen vacancies and displacement damage.