Stability and degradation of isolation and surface in Ga_2O_3 devices

摘要

Within this paper, we report the first study on the reliability of isolation structures and surfaces for the gallium oxide material system. Even though insulation by Mg-doping implantation and diffusion is found to provide a stable electrical isolation at increasing temperature, a significant thermally-activated leakage flows through surface states. The vertical bulk material does provide a better stability of the isolation over stress time, but withstands a lower level of stress compared with the surface and the lateral structure, possibly due to the charge trapping at the surface of the latter that mitigates the peak electric field.