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首页> 外文期刊>Microelectronics & Reliability >Double parallel barrier height behavior of Au/Poly (linoleic acid)-g-poly (methyl methacrylate) (PLiMMA)-Si structure
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Double parallel barrier height behavior of Au/Poly (linoleic acid)-g-poly (methyl methacrylate) (PLiMMA)-Si structure

机译:Au /聚(亚油酸)-g-聚(甲基丙烯酸甲酯)(PLiMMA)/ n-Si结构的双平行势垒高度行为

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The main electrical parameters and current conduction mechanisms of Au/Poly (linoleic acid)-g-poly (methyl methacrylate)-Si diode were carried out in the range of 300 K-400 K with a temperature increment of 10 K. Two distinct linear regions were observed in semi-logarithmic current-voltage (I-V) plots for each investigated temperature. For each linear region, leakage currents, barrier heights and ideality factors which are main electrical parameters of the diode were extracted from the experimental I-V measurements. Also, interface state density was derived by Card and Rhoderick's function. To obtain effective current conduction mechanisms, lnI versus lnV plots were obtained by taking into account of double linear region of current-voltage plots and abnormal increasing of barrier height and ideality factor at above the room temperature.
机译:Au /聚(亚油酸)-g-聚(甲基丙烯酸甲酯)/ n-Si二极管的主要电参数和电流传导机理在300 K-400 K的范围内进行,温度增量为10K。两个在每个研究温度的半对数电流-电压(IV)曲线图中观察到了明显的线性区域。对于每个线性区域,从实验I-V测量中提取出二极管的主要电参数泄漏电流,势垒高度和理想因子。此外,界面状态密度由Card和Rhoderick函数得出。为了获得有效的电流传导机制,通过考虑电流-电压图的双线性区域以及室温以上的势垒高度和理想因子的异常增加来获得lnI与lnV图。

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