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Modeling simplification for thermal mechanical stress analysis of TSV interposer stack

机译:TSV中介层堆叠的热机械应力分析的建模简化

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摘要

The generalized plane deformation (GPD) mode is a simplified model that effectively reflects the information of whole chip and local regions. In this paper, we propose a modified-GPD model for thermal-stress analysis of through silicon via (TSV) interposer application. Highly doped poly silicon is used to fill TSV in our modeling. The boundary conditions are optimized. The accuracy is largely improved and the computation time is reduced compared with conventional GPD model.
机译:广义平面变形(GPD)模式是一种简化的模型,可以有效地反映整个芯片和局部区域的信息。在本文中,我们提出了一种改进的GPD模型,用于通过硅通孔(TSV)中介层应用的热应力分析。在我们的建模中,使用高掺杂多晶硅填充TSV。边界条件已优化。与传统的GPD模型相比,该方法大大提高了精度,并减少了计算时间。

著录项

  • 来源
    《Microelectronics & Reliability》 |2019年第5期|46-50|共5页
  • 作者单位

    Zhejiang Univ, Ocean Coll, Key Lab Ocean Observat Imaging Testbed Zhejiang P, Hangzhou 316021, Zhejiang, Peoples R China;

    Zhejiang Univ, Ocean Coll, Key Lab Ocean Observat Imaging Testbed Zhejiang P, Hangzhou 316021, Zhejiang, Peoples R China;

    Nanjing Elect Devices Inst, Nanjing 210016, Jiangsu, Peoples R China;

    Zhejiang Univ, Ocean Coll, Key Lab Ocean Observat Imaging Testbed Zhejiang P, Hangzhou 316021, Zhejiang, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Three dimensional integration; Generalized plane deformation (GPD) mode; Through silicon via (TSV);

    机译:三维集成;广义平面变形(GPD)模式;直通硅通孔(TSV);

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