On the analysis of radiation-induced Single Event Transients on SRAM-based FPGAs

摘要

Reliability of Integrated Circuits (ICs) is nowadays a major concern for sub-micron technologies especially when they are adopted in mission critical applications. This paper presents a methodology for accurate characterization of radiation-induced Single Event Transients (SETs) effects in SRAM-based Field Programmable Gate Arrays (FPGAs). A technique based on internal electrical pulse injection is proposed for emulating SET within logic resources of SRAM-based FPGAs. Experimental results provide detailed characterization of basic logic gates.