Reliability and reliability investigation of wide-bandgap power devices

摘要

Established reliability test procedures from Si can widely be applied to SiC, however there are some differences and special challenges. A new test procedure for the gate oxide reliability is suggested, it leads to evaluable results within a reasonable time. Temperature-sensitive electrical parameters (TSEPs), which are necessary for power cycling tests, are investigated. For the SiC MOSFET and the GaN GIT, possible TSEPs are compared and applied to power cycling tests. GaN-based devices have further issues regarding reliability, like charge trapping, dynamic Ron, and degradation effects. The test matrix from Si is not sufficient to cover the reliability requirements for GaN.