Impact of elevated temperature applied during low dose rate irradiation on the degradation of BiCMOS operational amplifiers

摘要

The radiation-induced change in input bias current of bipolar input stage of BiCMOS operational amplifiers susceptible to enhanced low dose rate sensitivity (ELDRS) is studied as a function of the dose rate of gamma-irradiation and of the temperature applied during irradiation. Experimental results and results of the simulation with the conversion model of radiation-induced interface traps formation have shown that degradation enhancement factorKDprovided by the temperature applied during irradiation exhibits a nonmonotonic dependence on the dose rate: an elevated temperature provides the maximum increase in the degradation, if the dose rate is chosen from the range 0.1–1 rad(Si)/s, while irradiation with high (≥101 rad(Si)/s) and low dose rate (≤10−2 rad(Si)/s) provides approximately the same values ofKD. This range can be recommended for accelerated testing of bipolar and BiCMOS devices, if enhanced degradation in low dose rate conditions of space application is modeled by irradiation at elevated temperature.