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Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study

机译:静态电源电流驱动的复杂汽车IC缺陷定位:三个案例研究

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摘要

Quiescent current (IDDQ) test demonstrated over years its effectiveness in identifying the ICs failure root causes. In this paper three cases study are presented, all based on the use of IDDQ test during Emission Microscopy (EMMI). The DUTs analyzed, implemented in different technological solutions (BCD and BiCMOS), belong to the automotive market segment. In the cases here described the emission microscopy approach from both front and backside has been considered. Different physical analysis techniques have been used in order to characterize morphological marginalities or abnormalities. Results from the three cases should be good examples to prove how this kind of approach - fault isolation driven by IDDQ - is a powerful technique able to identify quickly and precisely failure root causes in high complexity ICs, independently of design and technology, and even when Automatic Test Pattern Generation (ATPG) is not available.Preferred presentation:[] Oral.[] Poster.[X] No preference.Preferred track (please, tick one or number 1 to 3 tracks in order of preference: 1 = most suiting, 3 = least suiting).[]A - Quality and Reliability Assessment Techniques and Methods for Devices and Systems[] B1 - Si Technologies & Nanoelectronics: Hot Carriers, High K, Gate Materials[] B2 - Si Technologies & Nanoelectronics: Low K, Cu Interconnects[] B3 - Si Technologies & Nanoelectronics: ESD, Latch-up[]C - Progress in Failure Analysis: Defect Detection and Analysis[] D - Reliability of Microwave and Compound Semiconductors Devices[]E1 - Power Devices Reliability: Silicon and Passive[] E2 - Power Devices Reliability: Wide Bandgap Devices[] F - Packaging and Assembly Reliability[] G - MEMS, Sensors and Organic Electronics Reliability[] H - Photonics Reliability[] I - Extreme Environments and Radiation[] K - Renewable Energies Reliability[] L - Modeling for Reliability[] SS1 (Special Session) - Reliability in Traction Applications.
机译:静态电流(IDDQ)测试多年来证明了其在识别IC故障根本原因方面的有效性。本文介绍了三个案例研究,所有这些案例都是基于在发射显微镜(EMMI)期间使用IDDQ测试的。经过分析的DUT以不同的技术解决方案(BCD和BiCMOS)实施,属于汽车市场领域。在这里描述的情况下,已经考虑了从正面和背面都采用发射显微镜的方法。为了表征形态学边缘或异常,已经使用了不同的物理分析技术。这三种情况的结果应该是很好的例子,以证明这种方法-由IDDQ驱动的故障隔离-是一种强大的技术,能够快速,准确地识别高复杂度IC中的故障根源,而与设计和技术无关,甚至在无法提供自动测试图案生成(ATPG)。首选演示文稿:[]口头报告[]海报。[X]无首选项。首选曲目(请按喜好顺序选择一个或第1至3个曲目:1 =最适合,3 =最不适合)。[] A-器件和系统的质量和可靠性评估技术和方法[] B1-硅技术与纳米电子:热载流子,高K,栅极材料[] B2-硅技术与纳米电子:低K ,铜互连[] B3-硅技术与纳米电子技术:ESD,闩锁[] C-失效分析的进展:缺陷检测和分析[] D-微波和化合物半导体器件的可靠性[] E1-电力器件的可靠性:硅和被动[] E2-功率器件的可靠性:宽带隙器件[] F-包装和组装的可靠性[] G-MEMS,传感器和有机电子器件的可靠性[] H-光子学的可靠性[] I-极端环境和辐射[] K-可再生能源的可靠性[] L -可靠性建模[] SS1(特别会议)-牵引应用中的可靠性。

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