Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2

摘要

The successful application of strained-layers based heterostructures for electronic and optoelectronic devices depends on a better under standing of strain-induced structural defects that lead to the deterioration of thematerials' electronic properties. We have previously reported the successful growth of strain compensated InP/GaAs/GaP/GaAs structures by chemical beam epitaxy. In this paper, we use similar structures grown on off-cut (001) GaAs substrates to investigate the dynamics of structural defects creation and propagation. Our results from high resolution X-ray diffraction (XRXRD), conventional and high resolution transmission electron microscopy (TEM and HRTEM) as well as cathodoluminescence (CL) techniques from samples grown on 2,4,6,10,12 and 14deg (111) A misooriented GaAs (001) substrates are presented. The effect of post-growth thermal treatment on these strain balanced superlattices are also discussed.